Title :
The Effect of the Metal, Interface, and Semiconductor Parameters on the Electrical Behaviour of Schottky Junctions
Author_Institution :
Research Institute for Technical Physics of the Hungarian Academy of Sciences, Budapest, P.O. Box 76, H-1325, Hungary
Abstract :
The effect of the metal, interface and semiconductor parameters on the barrier height of n-type Schottky junctions is analysed by means of a general expression.
Keywords :
Annealing; Capacitance-voltage characteristics; Dielectric constant; Electrons; Gallium arsenide; Genetic expression; Gold; Interface states; Physics; Schottky barriers;
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
