DocumentCode
1936670
Title
The Effect of the Metal, Interface, and Semiconductor Parameters on the Electrical Behaviour of Schottky Junctions
Author
Horvath, Zs J.
Author_Institution
Research Institute for Technical Physics of the Hungarian Academy of Sciences, Budapest, P.O. Box 76, H-1325, Hungary
fYear
1989
fDate
11-14 Sept. 1989
Firstpage
603
Lastpage
606
Abstract
The effect of the metal, interface and semiconductor parameters on the barrier height of n-type Schottky junctions is analysed by means of a general expression.
Keywords
Annealing; Capacitance-voltage characteristics; Dielectric constant; Electrons; Gallium arsenide; Genetic expression; Gold; Interface states; Physics; Schottky barriers;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location
Berlin, Germany
Print_ISBN
0387510001
Type
conf
Filename
5436530
Link To Document