Title :
Improved TDDB reliability of 1.5 nm thick gate dielectrics grown by radical oxynitridation
Author :
Yamamoto, Toyoji ; Ezaki, Tatsuya ; Watanabe, Kohji ; Togo, Mitsuhiro ; Morioka, Ayuka ; Hane, Masami ; Tatsumi, Tom ; Mogami, Tohru
Author_Institution :
Silicon Syst. Res. Labs, NEC Corp., Sagamihara, Japan
Abstract :
Time-dependent-dielectric-breakdown (TDDB) characteristics of 1.5 nm thick gate dielectrics were investigated. It is found that SiON film grown by radical oxynitridation has higher reliability than that of conventional SiO/sub 2/ film due to high quality SiO/sub 2//Si interface and low gate leakage.
Keywords :
MOSFET; leakage currents; nitridation; oxidation; percolation; semiconductor device breakdown; semiconductor device reliability; 1.5 nm; NMOSFET; SiO/sub 2/-Si; SiON film; TDDB reliability; conventional SiO/sub 2/ film; gate dielectrics; high quality SiO/sub 2//Si interface; low gate leakage; percolation model; radical oxynitridation; time-dependent-dielectric-breakdown; Anodes; Dielectric substrates; Electric breakdown; Gate leakage; MOSFETs; National electric code; Oxidation; Semiconductor films; Stress; Temperature dependence;
Conference_Titel :
Gate Insulator, 2001. IWGI 2001. Extended Abstracts of International Workshop on
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-021-6
DOI :
10.1109/IWGI.2001.967588
