• DocumentCode
    1936737
  • Title

    Improved TDDB reliability of 1.5 nm thick gate dielectrics grown by radical oxynitridation

  • Author

    Yamamoto, Toyoji ; Ezaki, Tatsuya ; Watanabe, Kohji ; Togo, Mitsuhiro ; Morioka, Ayuka ; Hane, Masami ; Tatsumi, Tom ; Mogami, Tohru

  • Author_Institution
    Silicon Syst. Res. Labs, NEC Corp., Sagamihara, Japan
  • fYear
    2001
  • fDate
    1-2 Nov. 2001
  • Firstpage
    220
  • Lastpage
    223
  • Abstract
    Time-dependent-dielectric-breakdown (TDDB) characteristics of 1.5 nm thick gate dielectrics were investigated. It is found that SiON film grown by radical oxynitridation has higher reliability than that of conventional SiO/sub 2/ film due to high quality SiO/sub 2//Si interface and low gate leakage.
  • Keywords
    MOSFET; leakage currents; nitridation; oxidation; percolation; semiconductor device breakdown; semiconductor device reliability; 1.5 nm; NMOSFET; SiO/sub 2/-Si; SiON film; TDDB reliability; conventional SiO/sub 2/ film; gate dielectrics; high quality SiO/sub 2//Si interface; low gate leakage; percolation model; radical oxynitridation; time-dependent-dielectric-breakdown; Anodes; Dielectric substrates; Electric breakdown; Gate leakage; MOSFETs; National electric code; Oxidation; Semiconductor films; Stress; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Gate Insulator, 2001. IWGI 2001. Extended Abstracts of International Workshop on
  • Conference_Location
    Tokyo, Japan
  • Print_ISBN
    4-89114-021-6
  • Type

    conf

  • DOI
    10.1109/IWGI.2001.967588
  • Filename
    967588
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1936737