Title :
A low cost linear AlGaAs/GaAs HBT MMIC power amplifier with active bias sensing for PCS applications
Author :
Walters, P. ; Pok Lau ; Buehring, K. ; Penney, J. ; Farley, C. ; McDade, P. ; Weller, K.
Author_Institution :
Microelectron. Technol. Center, rockwell Int., Newbury Park, CA, USA
fDate :
Oct. 29 1995-Nov. 1 1995
Abstract :
A dual RF input high linearity power amplifier for PCS bands from 1850 to 1910 MHz has been developed for TDMA/CDMA applications. It features on die, input switching, active bias sensing and regulation, 50/spl Omega/ input matching and power down control. A single positive supply voltage is required. This amplifier is packaged in a low cost plastic super small SSOP-16 package. In digital operation adjacent channel power rejection is better then 30 dBc at 800 mW and 22 dB of gain. Maximum output power is 2 W. Typical high power added efficiency (PAE) is 40%.
Keywords :
III-V semiconductors; MMIC power amplifiers; UHF integrated circuits; UHF power amplifiers; aluminium compounds; bipolar MMIC; code division multiple access; gallium arsenide; integrated circuit packaging; personal communication networks; power integrated circuits; time division multiple access; 1850 to 1910 MHz; 2 W; 22 dB; 40 percent; 800 mW; AlGaAs-GaAs; HBT MMIC power amplifier; PCN applications; PCS bands; SSOP-16 package; TDMA/CDMA applications; UHF operation; active bias sensing; dual RF input; input matching; linear power amplifier; low cost plastic super small package; power down control; single positive supply voltage; Costs; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; Linearity; MMICs; Personal communication networks; Plastic packaging; Radio frequency; Radiofrequency amplifiers;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1995. Technical Digest 1995., 17th Annual IEEE
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-2966-X
DOI :
10.1109/GAAS.1995.528963
