Title :
Enhanced Transconductance in Deep Submicron MOSFET
Author :
Hansch, W. ; Jacobs, H.
Author_Institution :
Siemens AG, Corporate Research and Development, Microelectronics, EL PT, Otto Hahu Ring 6,8000 Munich 83, FRG
Abstract :
We will demonstrate that the enhanced transconductance which is observed in deep submicron MOSFET at 77K and 300K can be modeled using an extended driftdiffusion approximiation with mobility parameters taken from measurements on MOSFETs of the 4M DRAM generation. We can show that for the terminal characteristic´s of these devices velocity overshoot is of little importance at least for devices with channel lengths larger than 60nm.
Keywords :
Charge measurement; Current measurement; Density measurement; Force measurement; MOSFET circuits; Predictive models; Random access memory; Temperature dependence; Temperature distribution; Transconductance;
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
