Title :
Fixed charge-induced mobility degradation and its recovery in MISFETs with Al2O3 gate dielectric
Author :
Torii, K. ; Shimamoto, Y. ; Saito, S. ; Obata, K. ; Yamauchi, T. ; Hisamoto, D. ; Yokoyama, N. ; Hiratani, M. ; Onai, T.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Japan
Abstract :
Thin films with high dielectric constant (high-/spl kappa/) have been attracting much attention because of their potential use as alternative gate dielectrics for sub-100 nm MOSFETs. In this paper we investigated the nature of mobility degradation due to the fixed charge for Al/sub 2/O/sub 3/ high-/spl kappa/ gate dielectric. We successfully recovered the mobility to half that of SiO/sub 2/ without EOT increase by controlling the interfacial oxide thickness.
Keywords :
MISFET; alumina; carrier mobility; dielectric thin films; Al/sub 2/O/sub 3/; Al/sub 2/O/sub 3/ thin film; MISFET; carrier mobility; equivalent oxide thickness; fixed charge; high-/spl kappa/ gate dielectric; Annealing; Capacitance-voltage characteristics; Capacitors; Dielectric thin films; FETs; Hysteresis; MISFETs; Permittivity; Temperature; Thermal degradation;
Conference_Titel :
Gate Insulator, 2001. IWGI 2001. Extended Abstracts of International Workshop on
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-021-6
DOI :
10.1109/IWGI.2001.967591
