Title :
Avoiding Lateral Diffusion of Dopants in n+/p+ Polycide Gates
Author :
Amm, D.T. ; Lévy, D. ; Paoli, Mario ; Delpech, P. ; D´Ouville, T. Ternisien ; Mingam, H. ; GÖltz, G.
Author_Institution :
Centre National d´´Etudes des Télécommunications, Chemin du Vieux Chêne, BP 98, 38243 MEYLAN Cedex, FRANCE.; Dept. of Physics, Queen´´s University, Kingston, Ontario, CANADA K7L 3N6
Abstract :
The lateral diffusion of dopants in a TiSi2 salicide process was studied for various BPSG reflow RTP anneals. Lateral diffusion of arsenic was detected for anneals above 1000°C (20 sec.) whereas no boron diffusion could be observed for anneals up to 1060°C. A novel ``weakly doped gate´´ test structure proved to be a sensitive detector of lateral diffusion.
Keywords :
Annealing; Boron; CMOS technology; Detectors; MOS devices; MOSFET circuits; Temperature; Testing; Threshold voltage; Titanium;
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
