PNP AlGaAs/GaAs HBT low noise amplifiers

Author

Kobayashi, K.W. ; Tran, L.T. ; Block, T. ; Cowles, J. ; Oki, A.K. ; Streit, D.C.

Author_Institution

Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA

fYear

1995

fDate

Oct. 29 1995-Nov. 1 1995

Firstpage

71

Lastpage

74

Abstract

This paper describes the performance of PNP AlGaAs/GaAs HBT-based low noise amplifiers. A 2 GHz narrow-band noise matched LNA achieves a min, NF=2.2 dB and an associated gain of 9.3 dB while consuming only 4 mW through a -2 V supply. A DC-4.5 GHz wideband direct-coupled LNA achieves 20 dB gain, and NFs of 2.0, 2.4, and 2.8 dB at 1, 2, and 4 GHz, respectively. The GaAs PNP HBTs of this work employ an exponentially graded base doping profile to enhance the device f/sub T/ and improve the high frequency NF performance. The resulting PNP HBT LNAs obtain noise figure-bandwidth performance which is better than Si-BJT LNAs, and comparable to NPN HBT LNAs for frequencies up to 4 GHz.

Keywords

DC amplifiers; III-V semiconductors; MMIC amplifiers; UHF amplifiers; UHF integrated circuits; aluminium compounds; bipolar MMIC; doping profiles; gallium arsenide; heterojunction bipolar transistors; integrated circuit noise; wideband amplifiers; -2 V; 0 to 4.5 GHz; 2 to 2.8 dB; 20 dB; 4 mW; 9.3 dB; AlGaAs-GaAs; HBT low noise amplifiers; PNP HBT-based LNAs; exponentially graded base doping profile; narrow-band noise matched LNA; noise figure-bandwidth performance; wideband direct-coupled LNA; Broadband amplifiers; Doping profiles; Frequency; Gain; Gallium arsenide; Heterojunction bipolar transistors; Low-noise amplifiers; Narrowband; Noise measurement; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1995. Technical Digest 1995., 17th Annual IEEE

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-2966-X

Type

conf

DOI

10.1109/GAAS.1995.528964

Filename

528964