DocumentCode
1937039
Title
CMOS-compatible High-voltage Complementary LDMOS Devices
Author
Duncan, M.R. ; Robertson, J.M. ; Holwill, R.J. ; Rodrigues, R.
Author_Institution
EMF, Dept. of Electrical Engineering, Edinburgh University, The King´´s Buildings, Edinburgh, EH9 3JL.
fYear
1989
fDate
11-14 Sept. 1989
Firstpage
535
Lastpage
538
Abstract
The design and implementation of a CMOS-compatible high-voltage process is described. It is shown that small changes can be made in an established n-well process to produce both high-voltage p- and n- channel power LDMOS transistors. These changes do not affect the performance of the low-voltage devices, and result in breakdown voltages of 50 volts for the p-channel, and 120 volts for the n-channel power transistors.
Keywords
Breakdown voltage; CMOS logic circuits; CMOS process; Flexible printed circuits; Lighting control; Logic design; Logic devices; Low voltage; Size control; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location
Berlin, Germany
Print_ISBN
0387510001
Type
conf
Filename
5436548
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