A wideband monolithic five-bit serrodyne modulator

Author

Mitchell, S. ; Wachsman, J. ; Lizama, G. ; Ali, F. ; Adar, A.

Author_Institution

Pacific Monolithics, Sunnyvale, CA, USA

fYear

1989

fDate

22-25 Oct. 1989

Firstpage

247

Lastpage

250

Abstract

An analysis and results of a serrodyne modulator, composed of a monolithic five-bit phase shifter and digital control circuits, are presented. Spur suppression of a serrodyne modulator is strongly dependent upon minimizing phase error and maintaining constant amplitude across all phase states. The advantages of monolithic GaAs ICs for this application are clear because of their inherent reproducibility. A monolithic five-bit serrodyne modulator demonstrates better than 22 dB of carrier and image suppression over a 7-12-GHz band when measured in the temperature range -50 degrees C to +95 degrees C.<>

Keywords

III-V semiconductors; MMIC; gallium arsenide; modulators; -50 to 95 degC; 7 to 12 GHz; GaAs; MMIC; SHF; digital control circuits; monolithic GaAs ICs; monolithic five-bit phase shifter; monolithic microwave IC; serrodyne modulator; wideband; Amplitude modulation; Circuits; Digital control; Digital modulation; Gallium arsenide; Phase modulation; Phase shifters; Reproducibility of results; Temperature measurement; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989. Technical Digest 1989., 11th Annual

Conference_Location

San Diego, CA, USA

Type

conf

DOI

10.1109/GAAS.1989.69335

Filename

69335