Title :
A Model for Oxygen Phase Transition Kinetics in CZ Grown Silicon and its Applications to IC Processes
Author :
Pagani, M. ; Huber, W.
Author_Institution :
Dynamit Nobel Silicon SpA, 28100 Novara, Italy
Abstract :
A model for oxygen precipitation in silicon at high temperatures has been developed and tested succesfully on different low-high treatment. The model was then extended to multistep treatments and tested on CMOS/NMOS processes simulations; trends are correctly predicted.
Keywords :
Application specific integrated circuits; CMOS process; Integrated circuit modeling; Kinetic theory; Oxygen; Predictive models; Semiconductor device modeling; Silicon; Temperature; Testing;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
