Title :
Analysis of the Specific ON-resistance in Conventional VDMOS Transistors
Author :
Fernandez, J. ; Paredes, J. ; Hidalgo, S. ; Domínguez, C. ; Berta, F. ; Rebollo, J. ; Millan, J.
Author_Institution :
Centro Nacional de Microelectrónica (CNM), CSIC-UAB, 08193 Bellaterra., Barcelona. Spain.
Abstract :
A distributed modellization of the specific ON-resistance is experimentally corroborated for VDMOS transistors with different cellular designs. The results for low voltage capability devices show differences for the optinmum percentage of the cell area outside the body at which the minimum of the specific ON-resistance occurs and for this minimum value compared with previous formulations. In addition, a new VDMOS design with a waved gate electrode is reported, which seems to be attractive for medium voltage applications.
Keywords :
Analytical models; Constraint optimization; Current density; Driver circuits; Electrodes; Epitaxial layers; Immune system; Low voltage; Medium voltage; Semiconductor process modeling;
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
