Title :
Al/TiN/TiSi2 Contacts to Ultra Shallow Junctions
Author :
Ling, E. ; Gamble, H.S. ; Armstrong, B.M. ; Montgomery, J.H.
Author_Institution :
Department of Electrical and Electronic Engineering, Queen´´s University of Belfast, Ashby Building, Belfast BT9 5AH N. Ireland
Abstract :
Processes for the production of reliable aluminium contacts to 110nM junctions are described. In the case of P+-N junctions the temperature-time cycles have been reduced to minimise redistribution of the boron impurities. A plasma enhanced rapid thermal processor has been employed.
Keywords :
Aluminum; Annealing; Boron; Contacts; Silicon; Surface resistance; Temperature; Thermal resistance; Tin; Titanium;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
