Mixed-mode simulations of ICs with complex nuclear events from MRED/Geant4 with 3D TCAD

Author

Fedoseyev, Alex ; Arslanbekov, Robert ; Turowski, Marek

Author_Institution

CFD Res. Corp. (CFDRC), Huntsville, AL, USA

fYear

2009

fDate

25-27 June 2009

Firstpage

468

Lastpage

471

Abstract

The newly developed TCAD and mixed-mode tools for automated simulations of single-event effects in integrated circuits are presented. The tool automatically builds 3D models from imported GDSII layouts and adapts the computational mesh to fine features of multi-branched ion tracks imported from MRED/Geant4 package, thus allowing significant increase in computation efficiency. An example of simulation of NMOS in inverter circuit is presented.

Keywords

MOS integrated circuits; circuit CAD; 3D TCAD; 3D model; MRED/Geant4 package; NMOS; automated simulation; complex nuclear event; computer aided design; integrated circuits; inverter circuit; mixed-mode simulation; Circuit simulation; Computational modeling; Discrete event simulation; Integrated circuit modeling; Inverters; MOS devices; Mesh generation; Packaging; Predictive models; SPICE; MRED/Geant4; NanoTCAD; integrated circuits; nuclear events; physics-based modeling of radiation effects; radiation hardening; single event transients;

fLanguage

English

Publisher

ieee

Conference_Titel

Mixed Design of Integrated Circuits & Systems, 2009. MIXDES '09. MIXDES-16th International Conference

Conference_Location

Lodz

Print_ISBN

978-1-4244-4798-5

Electronic_ISBN

978-83-928756-1-1

Type

conf

Filename

5289655