Title :
Physical Analysis of Peripheral Base Currents in an Advanced Polysilicon Self-aligned Bipolar Tranisistor Structure
Author :
Chantre, A. ; Giroult, G. ; Nouailhat, A.
Author_Institution :
CNET/CNS, B.P. 98, Chemin du Vieux Chêne, F-38243 MEYLAN CEDEX, FRANCE
Abstract :
The emitter/base junction properties of a CMOS compatible bipolar transistor structure have been studied. Dry etching induced damage occuring at the polysilicon emitter patterning level is found to account for the observed poor low current gain behaviour. Simple modifications of the device design are described and shown to result in high performance DC characteristics.
Keywords :
Bipolar transistors; Boron; CMOS process; CMOS technology; Dry etching; Fabrication; Temperature dependence; Temperature distribution; Thermal factors; Tunneling;
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
