DocumentCode
1937576
Title
Effect of Velocity Saturation on Small Signal Behaviour of Submicron MOSFETs: Analytical Modelling and 2-D Simulations
Author
Smedes, T.
Author_Institution
Eindhoven University of Technology, Faculty of Electrical Engineering, P.O. Box 513, 5600 MB Eindhoven, the Netherlands
fYear
1989
fDate
11-14 Sept. 1989
Firstpage
435
Lastpage
438
Abstract
In short channel MOSFETs the effect of carrier velocity saturation becomes increasingly important. This paper concentrates on its effect on the small signal behaviour. An analytical model, which is compared with 2D simulations for a wide frequency range and quasi-static measurements, shows an important influence on the If and hf behaviour.
Keywords
Admittance measurement; Analytical models; Coupled mode analysis; Differential equations; Frequency; MOSFETs; Partial differential equations; Q measurement; Signal analysis; Two dimensional displays;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location
Berlin, Germany
Print_ISBN
0387510001
Type
conf
Filename
5436575
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