Drain current drift by holes trapped in Schottky contact in WSi gate GaAs MESFETs

Author

Shiga, T. ; Hattori, R. ; Kunii, T. ; Oku, T. ; Sato, K. ; Ishihara, O.

Author_Institution

Optoelectron. & Microwave Devices R&D Lab., Mitsubishi Electr. Corp., Hyogo, Japan

fYear

1995

fDate

Oct. 29 1995-Nov. 1 1995

Firstpage

85

Lastpage

88

Abstract

Hysteretic drain current (Id) drift phenomena observed in the high power operation of WSi gate GaAs MESFETs were studied. The existence of a thin insulating layer at WSi-GaAs interface originated by the native oxide on GaAs surface was revealed by XPS and X-ray reflection. Id drift phenomena can be explained as the effect of holes being trapped in the insulating layer at the WSi-GaAs Schottky contact interface.

Keywords

III-V semiconductors; X-ray photoelectron spectra; electric current; gallium arsenide; hole traps; power MESFET; semiconductor device metallisation; semiconductor device models; semiconductor-metal boundaries; tungsten compounds; GaAs; Schottky contact; WSi gate MESFETs; WSi-GaAs; X-ray reflection; XPS; contact interface; drain current drift; high power operation; hysteretic drain current; native oxide; thin insulating layer; Annealing; FETs; Gallium arsenide; Hysteresis; Insulation; MESFETs; Molecular beam epitaxial growth; Schottky barriers; Sputtering; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1995. Technical Digest 1995., 17th Annual IEEE

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-2966-X

Type

conf

DOI

10.1109/GAAS.1995.528967

Filename

528967