Title :
The four-terminal silicon piezotransducer: history and future
Author :
Gridchin, Alexander V.
Author_Institution :
Novosibirsk State Tech. Univ., Russia
Abstract :
In this paper, the design of four-terminal silicon pressure piezotransducer (FTSP transducer) is presented. It have the rectangular current spread region with two current terminals and two potential terminals. The main principle of operation is the effect of transverse piezo-electromotive force. For designing of FTSP transducer it´s necessary to make a number of steps. First step is the selection of the elastic element and the place for location of the FTSP transducer. Second step is calculation of mechanical stresses. Third step is the selection of form of FTSP transducer. Fourth step is the calculation of the matrix of resistances. Fifth step is the calculation of the output voltage. Sixth step is the selection of base sizes of the transducer. Seventh step is the calculation of parameters of the circuit of temperature compensation. Thus now it is possible to design the FTSP transducer which can be used as pressure transducer both instead of piezoresistive bridge and simultaneously with such bridge. This transducer have the wide possibilities for miniaturization and can be applied easily in microsystems as an element for measuring of the pressure.
Keywords :
elemental semiconductors; piezoelectric transducers; pressure transducers; silicon; Si; current terminals; elastic element; four-terminal silicon piezotransducer; mechanical stresses; microsystems; miniaturization; output voltage; potential terminals; rectangular current spread region; resistance matrix; temperature compensation circuit parameters; transducer base size; transverse piezo-electromotive force; Piezoelectric transducers; Pressure measurement; Silicon;
Conference_Titel :
Electron Devices and Materials, 2004. Proceedings. 5th Annual. 2004 International Siberian Workshop on
Print_ISBN :
5-7782-0463-9
DOI :
10.1109/PESC.2004.241010