• DocumentCode
    1938375
  • Title

    Capacitance-voltage study of hydrogenated silicon-oxide-silicon structures fabricated by wafer bonding

  • Author

    Malyutina-Bronskaya, Victoria V. ; Kamaev, Gennady N.

  • Author_Institution
    Novosibirsk State Tech. Univ., Russia
  • fYear
    2004
  • fDate
    1-5 July 2004
  • Firstpage
    46
  • Lastpage
    47
  • Abstract
    Here we present the investigations of capacity-voltage characteristics on silicon-oxide-silicon-structures, which were obtained by a direct wafer bonding technique before and after hydrogen treatments. It is shown, that after hydrogenations for the bonded Si-SiO2 interface a decreasing of the density of surface states and the traps localized in a relatively narrow energy takes place.
  • Keywords
    capacitance; dangling bonds; electronic density of states; elemental semiconductors; hydrogenation; impurity states; interface states; silicon-on-insulator; surface states; wafer bonding; Si-SiO2; bonded interfaces; capacitance-voltage study; dangling bonds; density of surface states; donor like states; hydrogen treatment; hydrogenated silicon-oxide-silicon structures; hydrogenation; localised traps; narrow energy; wafer bonding; Capacitance; Interface phenomena; Silicon on insulator technology; Surfaces; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Materials, 2004. Proceedings. 5th Annual. 2004 International Siberian Workshop on
  • Print_ISBN
    5-7782-0463-9
  • Type

    conf

  • DOI
    10.1109/PESC.2004.241043
  • Filename
    1358286
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1938375