Title :
Improvement of breakdown voltage in InGaP/InGaAs/GaAs heterostructure MESFETs for MMICs
Author :
Inoue, K. ; Yamane, Y. ; Shiojima, K. ; Tokumitsu, M. ; Hyuga, F. ; Yamasaki, K.
Author_Institution :
NTT LSI Labs., Kanagawa, Japan
fDate :
Oct. 29 1995-Nov. 1 1995
Abstract :
This paper describes the trade-off between breakdown voltage and RF performance of InGaP/InGaAs/GaAs heterostructure MESFETs for power amplifiers and oscillators in multi-function MMICs in the millimeter-wave range. We successfully improved both gate-drain and drain source breakdown voltages while maintaining excellent high-frequency performance by using a double-layered gate consisting of WSiN with different nitrogen contents and by varying epitaxial layer thickness and implantation dose.
Keywords :
III-V semiconductors; MESFET integrated circuits; Schottky gate field effect transistors; field effect MMIC; gallium arsenide; gallium compounds; indium compounds; InGaP-InGaAs-GaAs; InGaP/InGaAs/GaAs heterostructure MESFETs; RF performance; WSiN; breakdown voltage; double-layered gate; epitaxial layer; implantation; millimeter-wave range; multi-function MMICs; power amplifiers; power oscillators; Epitaxial layers; Gallium arsenide; Indium gallium arsenide; MESFETs; MMICs; Nitrogen; Oscillators; Power amplifiers; Radio frequency; Radiofrequency amplifiers;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1995. Technical Digest 1995., 17th Annual IEEE
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-2966-X
DOI :
10.1109/GAAS.1995.528970
