Improvement of breakdown voltage in InGaP/InGaAs/GaAs heterostructure MESFETs for MMICs

Author

Inoue, K. ; Yamane, Y. ; Shiojima, K. ; Tokumitsu, M. ; Hyuga, F. ; Yamasaki, K.

Author_Institution

NTT LSI Labs., Kanagawa, Japan

fYear

1995

fDate

Oct. 29 1995-Nov. 1 1995

Firstpage

97

Lastpage

100

Abstract

This paper describes the trade-off between breakdown voltage and RF performance of InGaP/InGaAs/GaAs heterostructure MESFETs for power amplifiers and oscillators in multi-function MMICs in the millimeter-wave range. We successfully improved both gate-drain and drain source breakdown voltages while maintaining excellent high-frequency performance by using a double-layered gate consisting of WSiN with different nitrogen contents and by varying epitaxial layer thickness and implantation dose.

Keywords

III-V semiconductors; MESFET integrated circuits; Schottky gate field effect transistors; field effect MMIC; gallium arsenide; gallium compounds; indium compounds; InGaP-InGaAs-GaAs; InGaP/InGaAs/GaAs heterostructure MESFETs; RF performance; WSiN; breakdown voltage; double-layered gate; epitaxial layer; implantation; millimeter-wave range; multi-function MMICs; power amplifiers; power oscillators; Epitaxial layers; Gallium arsenide; Indium gallium arsenide; MESFETs; MMICs; Nitrogen; Oscillators; Power amplifiers; Radio frequency; Radiofrequency amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1995. Technical Digest 1995., 17th Annual IEEE

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-2966-X

Type

conf

DOI

10.1109/GAAS.1995.528970

Filename

528970