Determination of charge carriers mobility in P-HgCdTe by magnetophotoconductivity method

Author

Protasov, Dmitry D. ; Kostuchenko, Vladimir Ya ; Ovsyuk, Victor N.

Author_Institution

Inst. of Semicond. Phys., Acad. of Sci., Novosibirsk, Russia

fYear

2004

fDate

1-5 July 2004

Firstpage

53

Lastpage

55

Abstract

The method of magnetophotoconductivity is based on measurement of the magnetic-field dependence of photoconductivity. The magnetic field is parallel to the light propagation and normal to sample surface. Magnetophotoconductivity in MBE p-HgCdTe/GaAs films was studied in temperature range 77-300 K. At low temperatures mobility of minor electrons can be easily determined. At high temperatures, the magnetophotoconductivity method can be applied to determination of major holes mobility. Accuracy of the offered method is also discussed.

Keywords

II-VI semiconductors; III-V semiconductors; cadmium compounds; electron mobility; gallium arsenide; hole mobility; magneto-optical effects; mercury compounds; photoconductivity; semiconductor epitaxial layers; surface conductivity; 77 to 300 K; GaAs; HgCdTe; MBE; charge carrier mobility; hole mobility; light propagation; magnetic field; magnetophotoconductivity method; minor electron mobility; p-HgCdTe-GaAs films; surface conductivity; Cadmium compounds; Charge carrier mobility; Conductivity; Gallium compounds; Magnetooptic effects; Mercury compounds; Photoconductivity; Semiconductor epitaxial layers;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Materials, 2004. Proceedings. 5th Annual. 2004 International Siberian Workshop on

Print_ISBN

5-7782-0463-9

Type

conf

DOI

10.1109/PESC.2004.241046

Filename

1358289