DocumentCode :
1938487
Title :
Multi-peak resonant tunneling diodes based fuzzifiers
Author :
Tang, Hao ; Lin, Hung Chang ; Wei, Sen Jung
Author_Institution :
Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
fYear :
1994
fDate :
25-27 May 1994
Firstpage :
156
Lastpage :
161
Abstract :
In contrast to conventional CMOS and bipolar implementations for fuzzifier hardwares, the newly proposed fuzzifier circuits take advantage of the unique folding characteristic of one class of quantum well device, namely, the resonant tunneling diode (RTD). Three different types of RTD based fuzzifiers are proposed depending on the kinds of intrinsic I-V characteristics available. For fuzzy logic purposes, the multi-peaked RTD I-V characteristics can be generally classified as triangular, sawtooth and hysteretic types. The speed of operation, i.e. fuzzy logic inference per second (FLIPS) is expected to be high, and circuit complexity is reduced with respect to previously proposed fuzzifier circuits using conventional devices such as CMOS
Keywords :
computational complexity; fuzzy logic; inference mechanisms; resonant tunnelling devices; tunnel diodes; circuit complexity; folding characteristic; fuzzy logic; fuzzy logic inference per second; hysteretic; intrinsic I-V characteristics; quantum well device; resonant tunneling diodes based fuzzifiers; CMOS technology; Circuits; Complexity theory; Current measurement; Diodes; Educational institutions; Fuzzy logic; Hardware; Hysteresis; Resonant tunneling devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Multiple-Valued Logic, 1994. Proceedings., Twenty-Fourth International Symposium on
Conference_Location :
Boston, MA
Print_ISBN :
0-8186-5650-6
Type :
conf
DOI :
10.1109/ISMVL.1994.302211
Filename :
302211
Link To Document :
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