Title :
Enhancment of RHEED oscillations during Cs-induced GaAs MBE
Author :
Dmitriev, D.V. ; Tereshchenko, O.E. ; Toropov, A.I.
Author_Institution :
Inst. of Semicond. Phys., Acad. of Sci., Novosibirsk, Russia
Abstract :
We investigate the use of Cs as surfactant to grow low temperature (LT) GaAs with high structural quality of the epitaxial film. The morphology of the GaAs(001) surface grown at 200°C with Cs predeposition have showed a smooth surface. The observation of RHEED oscillations at LT means that even at T≤300°C the growth of GaAs proceeds in two-dimensional layer-by layer mode.
Keywords :
III-V semiconductors; caesium; gallium arsenide; molecular beam epitaxial growth; reflection high energy electron diffraction; semiconductor epitaxial layers; semiconductor growth; semiconductor-metal boundaries; surface morphology; surfactants; 200 degC; Cs induced GaAs MBE; GaAs(001) surface morphology; GaAs-Cs; RHEED oscillations; epitaxial film; low temperature GaAs structure; surfactant; two-dimensional GaAs mode; Cesium; Epitaxial growth; Gallium compounds; Semiconductor epitaxial layers; Semiconductor growth; Semiconductor-metal interfaces;
Conference_Titel :
Electron Devices and Materials, 2004. Proceedings. 5th Annual. 2004 International Siberian Workshop on
Print_ISBN :
5-7782-0463-9
DOI :
10.1109/PESC.2004.241048
