DocumentCode
1938494
Title
Enhancment of RHEED oscillations during Cs-induced GaAs MBE
Author
Dmitriev, D.V. ; Tereshchenko, O.E. ; Toropov, A.I.
Author_Institution
Inst. of Semicond. Phys., Acad. of Sci., Novosibirsk, Russia
fYear
2004
fDate
1-5 July 2004
Firstpage
60
Lastpage
61
Abstract
We investigate the use of Cs as surfactant to grow low temperature (LT) GaAs with high structural quality of the epitaxial film. The morphology of the GaAs(001) surface grown at 200°C with Cs predeposition have showed a smooth surface. The observation of RHEED oscillations at LT means that even at T≤300°C the growth of GaAs proceeds in two-dimensional layer-by layer mode.
Keywords
III-V semiconductors; caesium; gallium arsenide; molecular beam epitaxial growth; reflection high energy electron diffraction; semiconductor epitaxial layers; semiconductor growth; semiconductor-metal boundaries; surface morphology; surfactants; 200 degC; Cs induced GaAs MBE; GaAs(001) surface morphology; GaAs-Cs; RHEED oscillations; epitaxial film; low temperature GaAs structure; surfactant; two-dimensional GaAs mode; Cesium; Epitaxial growth; Gallium compounds; Semiconductor epitaxial layers; Semiconductor growth; Semiconductor-metal interfaces;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Materials, 2004. Proceedings. 5th Annual. 2004 International Siberian Workshop on
Print_ISBN
5-7782-0463-9
Type
conf
DOI
10.1109/PESC.2004.241048
Filename
1358291
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