DocumentCode :
1938514
Title :
Adatom potential relief on Si (111) - 7×7 surface
Author :
Vershinin, Andrew V. ; Zverev, Alexey V. ; Shwartz, Natalia L. ; Yanovitskaja, Zoya Sh
Author_Institution :
Novosibirsk State Tech. Univ., Russia
fYear :
2004
fDate :
1-5 July 2004
Firstpage :
62
Lastpage :
65
Abstract :
Simulation of Adatom potential relief on Si (111) - 7×7 surface was carried out using Tersoff potential. Positions of adatom localization on reconstructed surface were determined. Three absolute energy minimums are found around each rest atom of the height H1=2.3 Å over lower monolayer of upper bilayer. Energy barriers of diffusion hops have been estimated: for hops around rest atom 0.75 eV, for hops from one rest atom to neighbor rest-atom 1.25 eV and for transition from one half-cell to the other 1.75 eV.
Keywords :
diffusion barriers; elemental semiconductors; monolayers; silicon; stacking faults; surface diffusion; surface phase transformations; surface potential; surface reconstruction; Si; Si (111) surface; Tersoff potential; adatom localization position; adatom potential relief; diffusion hops; energy barriers; monolayer; surface phase transition; surface reconstruction; Diffusion processes; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Materials, 2004. Proceedings. 5th Annual. 2004 International Siberian Workshop on
Print_ISBN :
5-7782-0463-9
Type :
conf
DOI :
10.1109/PESC.2004.241049
Filename :
1358292
Link To Document :
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