Title :
Simulation of selective etching process of AIIIBV semiconductors
Author :
Khaynovskaya, Natalia V. ; Kamenskaya, Anna V.
Author_Institution :
Novosibirsk State Tech. Univ., Russia
Abstract :
In this paper the program for two-dimensional simulation of selective etching of the AIIIBV semiconductors is considered. By creation of algorithm of selective etching it was taken into account the following factors: complexity of a mask, number of used surface orientations, etching solution and so on. On the finishing cycle of the program the working window shows a kind of a resulting structures of diffraction lattices. The results of simulation are compared with experiment.
Keywords :
III-V semiconductors; etching; gallium arsenide; masks; semiconductor epitaxial layers; semiconductor lasers; surface structure; AIIIBV semiconductors; GaAs; GaAs surface; diffraction lattice structure; etching solution; injection lasers; mask complexity; surface orientations; two-dimensional selective etching process simulation; Etching; Gallium compounds; Masks; Semiconductor epitaxial layers; Semiconductor lasers;
Conference_Titel :
Electron Devices and Materials, 2004. Proceedings. 5th Annual. 2004 International Siberian Workshop on
Print_ISBN :
5-7782-0463-9
DOI :
10.1109/PESC.2004.241050
