Title :
Simulation of CMOS inverter with the help of TCAD ISE package
Author :
Vorogeykin ; Makarov, Eugene A.
Author_Institution :
Novosibirsk State Tech. Univ., Russia
Abstract :
The simulation of transient CMOS inverter with side dielectric isolation by shallow trenches is carried out. It is shown that tightening of a switching input pulse front reduces in the unclosing of the second transistor and the course of a padding current through the inverter.
Keywords :
MOSFET; invertors; isolation technology; semiconductor device models; MOS transistor; TCAD ISE package; dielectric isolation technology; padding current; switching pulse; transient CMOS inverter; Inverters; Isolation technology; MOSFETs; Semiconductor device modeling;
Conference_Titel :
Electron Devices and Materials, 2004. Proceedings. 5th Annual. 2004 International Siberian Workshop on
Print_ISBN :
5-7782-0463-9
DOI :
10.1109/PESC.2004.241075
