DocumentCode :
1938595
Title :
Features of designing of polysilicon sensors of thermal streams
Author :
Dikareva, Regina P. ; Lobach, Oleg V. ; Kozlovskaja, Ekaterina V.
Author_Institution :
Novosibirsk State Tech. Univ., Russia
fYear :
2004
fDate :
1-5 July 2004
Firstpage :
74
Lastpage :
75
Abstract :
Designing of polysilicon thermal sensors using photolithography and photomasks was analysed. Dielectric isolation which divides a sensitive element of a thermal sensor and a substrate. A polycrystalline material is composed of small crystallites joined together by grain boundaries. The angle between the orientations of the adjoining crystallites is often large. In a real polycrystalline material, the crystallites have a distribution of sizes and irregular shapes. It was assumed that polysilicon is composed of identical crystallites having equal size of a grain and there is only one type impurity atom which are totally ionised. On the basis of this assumption, the thermal sensor was developed.
Keywords :
crystallites; elemental semiconductors; grain boundaries; grain size; isolation technology; masks; photolithography; silicon; temperature sensors; Si; dielectric isolation; grain boundaries; grain size; identical crystallites; impurity atom; irregular shapes; photolithography; photomasks; polycrystalline material; polysilicon thermal sensors; thermal streams; Isolation technology; Masks; Photolithography; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Materials, 2004. Proceedings. 5th Annual. 2004 International Siberian Workshop on
Print_ISBN :
5-7782-0463-9
Type :
conf
DOI :
10.1109/PESC.2004.241076
Filename :
1358296
Link To Document :
بازگشت