• DocumentCode
    1938595
  • Title

    Features of designing of polysilicon sensors of thermal streams

  • Author

    Dikareva, Regina P. ; Lobach, Oleg V. ; Kozlovskaja, Ekaterina V.

  • Author_Institution
    Novosibirsk State Tech. Univ., Russia
  • fYear
    2004
  • fDate
    1-5 July 2004
  • Firstpage
    74
  • Lastpage
    75
  • Abstract
    Designing of polysilicon thermal sensors using photolithography and photomasks was analysed. Dielectric isolation which divides a sensitive element of a thermal sensor and a substrate. A polycrystalline material is composed of small crystallites joined together by grain boundaries. The angle between the orientations of the adjoining crystallites is often large. In a real polycrystalline material, the crystallites have a distribution of sizes and irregular shapes. It was assumed that polysilicon is composed of identical crystallites having equal size of a grain and there is only one type impurity atom which are totally ionised. On the basis of this assumption, the thermal sensor was developed.
  • Keywords
    crystallites; elemental semiconductors; grain boundaries; grain size; isolation technology; masks; photolithography; silicon; temperature sensors; Si; dielectric isolation; grain boundaries; grain size; identical crystallites; impurity atom; irregular shapes; photolithography; photomasks; polycrystalline material; polysilicon thermal sensors; thermal streams; Isolation technology; Masks; Photolithography; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Materials, 2004. Proceedings. 5th Annual. 2004 International Siberian Workshop on
  • Print_ISBN
    5-7782-0463-9
  • Type

    conf

  • DOI
    10.1109/PESC.2004.241076
  • Filename
    1358296