Double recessed AlInAs/GaInAs/InP HEMTs with high breakdown voltages

Author

Hur, K.Y. ; McTaggart, R.A. ; LeBlanc, B.W. ; Hoke, W.E. ; Lemonias, P.J. ; Miller, A.B. ; Kazior, T.E. ; Aucoin, L.M.

Author_Institution

Advanced Device Centre, Raytheon Co., Andover, MA, USA

fYear

1995

fDate

Oct. 29 1995-Nov. 1 1995

Firstpage

101

Lastpage

104

Abstract

A double recessed T-gate process has been successfully utilized to increase gate-to-drain breakdown voltages of double pulse doped AlInAs/GaInAs/InP HEMTs. By varying lateral channel dimensions, breakdown voltages in the range 11-19 V can be tailored with maximum channel currents in the range 450-600 mA/mm. This combination of high breakdown voltages and high channel currents indicate that the double recess process is a promising approach for high power applications.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; power HEMT; 11 to 19 V; AlInAs-GaInAs-InP; breakdown voltages; channel currents; double recessed T-gate; high power applications; lateral channel dimensions; pulse doped AlInAs/GaInAs/InP HEMTs; Breakdown voltage; Etching; Fabrication; Gallium arsenide; HEMTs; Indium phosphide; MODFETs; Molecular beam epitaxial growth; PHEMTs; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1995. Technical Digest 1995., 17th Annual IEEE

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-2966-X

Type

conf

DOI

10.1109/GAAS.1995.528971

Filename

528971