DocumentCode
1938652
Title
Experimental study of the ground plane in asymmetric coupled silicon lines
Author
Arz, Uwe ; Williams, Dylan F. ; Grabinski, Hartmut
Author_Institution
Nat. Inst. of Stand. & Technol., Boulder, CO, USA
fYear
2001
fDate
2001
Firstpage
317
Lastpage
320
Abstract
We use a measurement method designed for coupled lines on highly conductive substrates to characterize identical asymmetric coupled lines fabricated on lossy silicon with and without a metallization plane beneath the two signal conductors. The study illustrates the important role of the return path in determining the electromagnetic coupling between the lines
Keywords
coupled transmission lines; electromagnetic coupling; elemental semiconductors; high-frequency transmission line measurement; metallisation; microstrip lines; silicon; Si; asymmetric coupled microstrip lines; conductive substrate; electromagnetic coupling; ground plane; lossy silicon; measurement method; metallization plane; return path; signal conductor; Capacitance; Conductors; Electrical resistance measurement; Electromagnetic measurements; Frequency; Loss measurement; Metallization; Microstrip; Silicon; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Performance of Electronic Packaging, 2001
Conference_Location
Cambridge, MA
Print_ISBN
0-7803-7024-4
Type
conf
DOI
10.1109/EPEP.2001.967672
Filename
967672
Link To Document