Title :
Millimeter-Wave Small-Signal Model Using A Coplanar Waveguide De-Embedded Sub-Model for HEMT
Author :
Tung The-Lam Nguyen ; Sam-Dong Kim
Author_Institution :
Div. of Electron. & Electr. Eng., Dongguk Univ., Seoul, South Korea
Abstract :
We propose in this study an approach to highly reliable extraction method for parasitic elements of the 0.1 μm GaAs metamorphic high electron mobility transistors. This method utilizes the de-embedding scheme for the coplanar waveguide (CPW) feeding structure by considering the distributed extrinsic parasitic elements in our small-signal model. The parasitic extrinsic capacitances are determined by modeling a PI equivalent circuit including the interaction between the sub-model (the model after de-embedding) and the CPW feedings. Extractions for the parasitic elements are performed at four different gate widths ( 2×10 μm, 2×20 μm, 2×30 μm, and 2×70 μm), and our S-parameter prediction shows the best agreement with the measurements in a frequency range of 0.5-110 GHz (0.5 GHz step) among the small-signal models reported to date.
Keywords :
III-V semiconductors; S-parameters; capacitance; coplanar waveguides; gallium arsenide; high electron mobility transistors; millimetre wave field effect transistors; semiconductor device models; GaAs; GaAs metamorphic high electron mobility transistors; HEMT; PI equivalent circuit; S-parameter prediction; coplanar waveguide de-embedded sub-model; coplanar waveguide feeding structure; de-embedding scheme; distributed extrinsic parasitic elements; frequency 0.5 GHz to 110 GHz; highly reliable extraction method; millimeter-wave small-signal model; parasitic extrinsic capacitances; size 0.1 mum; Coplanar waveguides; Equivalent circuits; Frequency measurement; Integrated circuit modeling; Logic gates; mHEMTs; Field effect transistors (FETs); linear and non-linear device modeling; microwave device characterization and measurements;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2013.2290214
