Title :
Novel Dual-Band Matching Network for Effective Design of Concurrent Dual-Band Power Amplifiers
Author :
Xin Fu ; Bespalko, Dylan T. ; Boumaiza, Slim
Author_Institution :
Electr. & Comput. Eng. Dept., Univ. of Waterloo, Waterloo, ON, Canada
Abstract :
In this paper, a systematic approach to the synthesis of a novel dual-band matching network is proposed and applied to design a dual-band power amplifier (PA) capable of maintaining high power efficiency at two arbitrary, widely spaced frequencies. The proposed network incorporates two different stages. The first one transforms the targeted complex impedances, at the two operating frequencies, to a real one. The second stage is a dual band filter that ensures the matching of the former real impedance to the termination impedance. An additional transmission line is incorporated between the two stages to adjust the impedances at the second and third harmonics without altering the impedances seen at the fundamental frequencies. The harmonic termination control is very effective in enhancing the efficiency of radio frequency transistors, especially when exploiting the Class J design space. The proposed dual-band matching network synthesis methodology was applied to design a dual band PA using a packaged 45 W Gallium Nitride (GaN) transistor. The PA prototype maintained a peak power efficiency of about 68% at operating frequencies of 800 MHz and 1.9 GHz. In addition, a Volterra based digital pre-distortion technique was successfully applied to linearize the PA response around the two operating frequencies.
Keywords :
III-V semiconductors; UHF amplifiers; impedance matching; power amplifiers; wide band gap semiconductors; GaN; Volterra based digital predistortion technique; class J design space; concurrent dual-band power amplifier design; dual band PA design; dual band filter; dual-band matching network synthesis methodology; frequency 1.9 GHz; frequency 800 MHz; gallium nitride transistor; harmonic termination control; impedance matching; power 45 W; radio frequency transistors; termination impedance; transmission line; Class J; dual-band filters; dual-band power amplifiers; high efficiency; high power; impedance matching;
Journal_Title :
Circuits and Systems I: Regular Papers, IEEE Transactions on
DOI :
10.1109/TCSI.2013.2268132