Title :
Low threshold CW lasing in photo-pumped GaInAsP microdisk lasers
Author :
Fujita, M. ; Teshima, K. ; Baba, T.
Author_Institution :
Div. of Electr. & Comput. Eng., Yokohama Nat. Univ., Japan
Abstract :
We demonstrate photo-pumped GaInAsP microdisk lasers. The minimum threshold pump power is as low as /spl sim/ 20 /spl mu/W at room temperature under CW condition.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; microdisc lasers; optical pumping; quantum well lasers; 20 muW; GaInAsP; ICP etching; compressively-strained QW; heat sinking structures; high gain wavelength range; low scattering loss; low threshold CW lasing; minimum threshold pump power; photo-pumped microdisk lasers; room temperature; Laser excitation; Laser modes; Optical pumping; Power lasers; Pump lasers; Spontaneous emission; Stimulated emission; Surface emitting lasers; Thermal resistance; Wet etching;
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Conference_Location :
Chiba, Japan
Print_ISBN :
0-7803-6738-3
DOI :
10.1109/CLEOPR.2001.967701
