Title :
Ohmic Contacts to n-type GaAs Using GeMoW Metallizati1on for Self-aliged Processing
Author :
Dubon-Chevallier, C. ; Henoc, P. ; Glas, F. ; Gao, Y. ; Bresse, J.R. ; Blanconnier, P. ; Besombes, C.
Author_Institution :
Centre National d´´Etudes des T?l?communications, Laboratoire de Bagneux, 196 avenue Henri Ravera, 92220 Bagneux, France
Abstract :
We have formed GeMoW and Ge(As)MoW ohmic contacts to n-type GaAs using different types of annealing techniques, under either a forming gas or an As overpressure. A comprehensive study of both contacts is presented using electrical testing, Auger electron spectroscopy, secondary ion-mass spectrometry, transmission electron microscopy and scanning transmission electron microscopy. Very low specific contact resistivities, in the range of a few 10-7 ¿cm2, have been obtained, when the contact included an As doped Ge layer with a doping level of 1020 cm¿3 and was annealed using the semi-closed box technique under an As overpressure.
Keywords :
Annealing; Conductivity; Doping; Gallium arsenide; Metallization; Ohmic contacts; Scanning electron microscopy; Spectroscopy; Testing; Transmission electron microscopy;
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
