• DocumentCode
    1939007
  • Title

    Ohmic Contacts to n-type GaAs Using GeMoW Metallizati1on for Self-aliged Processing

  • Author

    Dubon-Chevallier, C. ; Henoc, P. ; Glas, F. ; Gao, Y. ; Bresse, J.R. ; Blanconnier, P. ; Besombes, C.

  • Author_Institution
    Centre National d´´Etudes des T?l?communications, Laboratoire de Bagneux, 196 avenue Henri Ravera, 92220 Bagneux, France
  • fYear
    1989
  • fDate
    11-14 Sept. 1989
  • Firstpage
    161
  • Lastpage
    164
  • Abstract
    We have formed GeMoW and Ge(As)MoW ohmic contacts to n-type GaAs using different types of annealing techniques, under either a forming gas or an As overpressure. A comprehensive study of both contacts is presented using electrical testing, Auger electron spectroscopy, secondary ion-mass spectrometry, transmission electron microscopy and scanning transmission electron microscopy. Very low specific contact resistivities, in the range of a few 10-7 ¿cm2, have been obtained, when the contact included an As doped Ge layer with a doping level of 1020 cm¿3 and was annealed using the semi-closed box technique under an As overpressure.
  • Keywords
    Annealing; Conductivity; Doping; Gallium arsenide; Metallization; Ohmic contacts; Scanning electron microscopy; Spectroscopy; Testing; Transmission electron microscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
  • Conference_Location
    Berlin, Germany
  • Print_ISBN
    0387510001
  • Type

    conf

  • Filename
    5436642
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1939007