DocumentCode :
1939009
Title :
Sub 10-nm accuracy in positioning plasmonic nanostructures on self-assembled GaAs quantum dots
Author :
Lindfors, K. ; Pfeiffer, Michael ; Fenk, B. ; Phillipp, F. ; Atkinson, Peter M. ; Rastelli, A. ; Schmidt, Oliver G. ; Giessen, H. ; Lippitz, M.
Author_Institution :
Max Planck Inst. for Solid State Res., Stuttgart, Germany
fYear :
2013
fDate :
12-16 May 2013
Firstpage :
1
Lastpage :
1
Abstract :
Here we describe a technique which allows us to fabricate nanostructures positioned with respect to single GaAs quantum dots with an accuracy of better than 10 nm.
Keywords :
III-V semiconductors; gallium arsenide; nanofabrication; nanopositioning; nanostructured materials; plasmonics; self-assembly; semiconductor quantum dots; GaAs; plasmonic nanostructures; positioning; self-assembled quantum dots; single GaAs quantum dots; sub 10-nm accuracy; Accuracy; Nanostructures; Optical device fabrication; Optical polarization; Plasmons; Quantum dots; Stimulated emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Europe (CLEO EUROPE/IQEC), 2013 Conference on and International Quantum Electronics Conference
Conference_Location :
Munich
Print_ISBN :
978-1-4799-0593-5
Type :
conf
DOI :
10.1109/CLEOE-IQEC.2013.6801898
Filename :
6801898
Link To Document :
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