Title :
Some specification to the theory of field transistors
Author :
Vorobyova, Svetlana V. ; Ignatov, Aleksandr N. ; Fadeeva, Natalya E.
Author_Institution :
Siberian State Univ. of Telecommun. & Inf., Novosibirsk, Russia
Abstract :
In this paper the adjusted models of field effect transistors (FET) are considered taking into account the influence of not modulated resistances of a drain, source, gate, and also the formulas for the calculation of Y-parameters on frequency range 10...300 MHz are obtained.
Keywords :
field effect transistors; semiconductor device models; FET; Y-parameters; drain resistance; field effect transistor models; gate resistance; source resistance; FETs; Semiconductor device modeling;
Conference_Titel :
Electron Devices and Materials, 2004. Proceedings. 5th Annual. 2004 International Siberian Workshop on
Print_ISBN :
5-7782-0463-9
DOI :
10.1109/PESC.2004.241205
