• DocumentCode
    1939074
  • Title

    Some specification to the theory of field transistors

  • Author

    Vorobyova, Svetlana V. ; Ignatov, Aleksandr N. ; Fadeeva, Natalya E.

  • Author_Institution
    Siberian State Univ. of Telecommun. & Inf., Novosibirsk, Russia
  • fYear
    2004
  • fDate
    1-5 July 2004
  • Firstpage
    123
  • Lastpage
    125
  • Abstract
    In this paper the adjusted models of field effect transistors (FET) are considered taking into account the influence of not modulated resistances of a drain, source, gate, and also the formulas for the calculation of Y-parameters on frequency range 10...300 MHz are obtained.
  • Keywords
    field effect transistors; semiconductor device models; FET; Y-parameters; drain resistance; field effect transistor models; gate resistance; source resistance; FETs; Semiconductor device modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Materials, 2004. Proceedings. 5th Annual. 2004 International Siberian Workshop on
  • Print_ISBN
    5-7782-0463-9
  • Type

    conf

  • DOI
    10.1109/PESC.2004.241205
  • Filename
    1358317
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1939074