Confined modes of two dimensional photonic crystal defect cavities with Indium Arsenide quantum dots

Author

Yoshie, T. ; Scherer, A. ; Hao Chen ; Huffaker, D. ; Deppe, D.

Author_Institution

Dept. of Electr. Eng., California Inst. of Technol., Pasadena, CA, USA

Volume

1

fYear

2001

fDate

15-19 July 2001

Abstract

We have fabricated and characterized two-dimensional photonic crystal with defect cavities containing self-organized indium arsenide quantum dots as active material. Single defect donor modes were found to have well localized close to the single defect.

Keywords

III-V semiconductors; electron beam lithography; indium compounds; molecular beam epitaxial growth; optical fabrication; optical planar waveguides; optical pumping; optical resonators; photoluminescence; photonic band gap; semiconductor quantum dots; InAs; active membrane; beam-written patterns; cavity resonance; confined modes; defect cavities; electron beam lithography; hexagonal-arrayed cavity; mode splitting; molecular beam epitaxy; optically pumped; photoluminescence spectra; self-organized quantum dots; single defect donor modes; two-dimensional photonic crystal; Indium; Lattices; Lithography; Optical surface waves; Photonic crystals; Quantum dots; Resonance; Surface emitting lasers; Surface waves; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on

Conference_Location

Chiba, Japan

Print_ISBN

0-7803-6738-3

Type

conf

DOI

10.1109/CLEOPR.2001.967704

Filename

967704