Title :
Build-up electrical insulation material with low-dielectric tangent, low-CTE and low-surface roughness
Author :
Suzuki, Isao ; Tanaka, Toshiaki ; Uenishi, Akihiro ; Kobayashi, Takayuki ; Murakami, Junnosuke
Author_Institution :
R&D Center, Sekisui Chem. Co., Ltd., Tsukuba, Japan
Abstract :
With the increasing speed of information and communications equipment in recent years, together with high-speed signal processing of LSIs, there is a requirement for build-up electrical insulation materials to be used as IC package substrates with low-dielectric tangent, and to reduce the dielectric loss to achieve low transmission loss in the high-frequency GHz bands. At the same time, there is an increasing need for low-CTEs (Coefficient of Thermal Expansion) to ensure highly reliable substrates. With our formulation technology, we have developed a next-generation film-shaped build-up electrical insulation material compatible with high-frequency signal transmission by using composition of practical thermosetting epoxy resin, that has realized both a low-dielectric tangent and a low-CTE at the same time. Furthermore, this material can show a low-surface roughness after the film desmear process. It is thus expected to help reduce not only the dielectric loss by low-dielectric tangent but also the conductor loss caused by the skin effect, and promote the fine line formation by SAP (Semi Additive Process).
Keywords :
dielectric losses; dielectric materials; epoxy insulation; integrated circuit packaging; skin effect; surface roughness; thermal expansion; IC package substrates; build up electrical insulation material; conductor loss; dielectric loss; film desmear process; fine line formation; high frequency band; high speed signal processing; highly reliable substrate; low dielectric tangent; low surface roughness; practical thermosetting epoxy resin; semi additive process; skin effect; thermal expansion coefficient; transmission loss; Copper; Dielectric losses; Insulation; Propagation losses; Substrates;
Conference_Titel :
CPMT Symposium Japan, 2010 IEEE
Conference_Location :
Tokyo
Print_ISBN :
978-1-4244-7593-3
DOI :
10.1109/CPMTSYMPJ.2010.5680298