Title :
XPSim: a MOS VLSI simulator
Author :
Bauer, R.L. ; Jiayuan Fang ; Ng, A.P.-C. ; Brayton, R.K.
Author_Institution :
Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
XPSim (formerly known as SuperCrystal), a multirate, event-driven circuit simulator suitable for large MOS VLSI circuits, is described. XPSim incorporates both static and dynamic partitioning of the circuit. Each partitioned subcircuit is numerically solved with a new integration method-the exponential function method. The voltage waveforms produced by this method are piecewise exponentials. Currently, XPSim supports up to a third-order explicit method. Preliminary tests indicate that XPSim exhibits a significant speedup over SPICE while retaining similar accuracy and is able to handle large circuits.<>
Keywords :
MOS integrated circuits; VLSI; circuit CAD; circuit analysis computing; digital simulation; MOS VLSI simulator; SuperCrystal; XPSim; dynamic partitioning; event-driven circuit simulator; exponential function method; integration; large circuits; partitioned subcircuit; piecewise exponentials; third-order explicit method; voltage waveforms; Circuit simulation; Computational modeling; MOS capacitors; MOSFETs; Resistors; SPICE; Scheduling; Very large scale integration; Voltage;
Conference_Titel :
Computer-Aided Design, 1988. ICCAD-88. Digest of Technical Papers., IEEE International Conference on
Conference_Location :
Santa Clara, CA, USA
Print_ISBN :
0-8186-0869-2
DOI :
10.1109/ICCAD.1988.122464
