DocumentCode
1939358
Title
New mechanism of creation of defects in semiconductor by laser radiation
Author
Medvid, A. ; Hatanaka, Y.
Author_Institution
Riga Tech. Univ., Latvia
Volume
1
fYear
2001
fDate
15-19 July 2001
Abstract
A new thermogradient mechanism for creation of defects in semiconductors by separation of intrinsic defects in a temperature gradient field is proposed. Experimental results for p-InSb and p-CdTe samples using Nd:YAG laser irradiation showed the role of hot charge carriers in formation of p-n junctions and A-centres in CdTe(Cl).
Keywords
A-centres; II-VI semiconductors; III-V semiconductors; cadmium compounds; defect states; hot carriers; indium compounds; laser beam effects; p-n junctions; photoluminescence; temperature distribution; A-centres; CdTe; CdTe:Cl; InSb; defect creation; hot charge carriers; intrinsic defect separation; laser radiation; p-CdTe; p-InSb; p-n junction formation; photoluminescence spectra; semiconductor; temperature gradient field; thermogradient mechanism; Atomic beams; Atomic measurements; Charge carriers; Laser modes; Laser theory; Lattices; P-n junctions; Photoluminescence; Semiconductor lasers; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Conference_Location
Chiba, Japan
Print_ISBN
0-7803-6738-3
Type
conf
DOI
10.1109/CLEOPR.2001.967715
Filename
967715
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