DocumentCode
1939584
Title
Quality and Applications of In(Ga) AIAs-Layers
Author
Schramm, C. ; Künzel, H. ; Bornholdt, C. ; Su, L.M. ; Wehmann, H.-H.
Author_Institution
Heinrich-Hertz-Institut fÿr Nachrichtentechnik Berlin GmbH, Einsteinufer 37, D-1000 Berlin 10, FRG
fYear
1989
fDate
11-14 Sept. 1989
Firstpage
59
Lastpage
62
Abstract
In the last few years the InGaAlAs material system received increasing interest for application in integrated optoelectronic devices. We present an analysis of layer and surface quality of MBE-grown InAlAs material, a systematic improvement of Schottky contacts characterized by electrical measurements and finally, the fabrication of MeSFET (Metal Semiconductor Field Effect Transistors), DHBT (Double Heterostructure Bipolar Transistors) and rib waveguide devices.
Keywords
Electric variables measurement; FETs; Indium compounds; Inorganic materials; Integrated optoelectronics; MESFETs; Optical device fabrication; Schottky barriers; Semiconductor materials; Surface waves;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location
Berlin, Germany
Print_ISBN
0387510001
Type
conf
Filename
5436669
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