Title :
Quality and Applications of In(Ga) AIAs-Layers
Author :
Schramm, C. ; Künzel, H. ; Bornholdt, C. ; Su, L.M. ; Wehmann, H.-H.
Author_Institution :
Heinrich-Hertz-Institut fÿr Nachrichtentechnik Berlin GmbH, Einsteinufer 37, D-1000 Berlin 10, FRG
Abstract :
In the last few years the InGaAlAs material system received increasing interest for application in integrated optoelectronic devices. We present an analysis of layer and surface quality of MBE-grown InAlAs material, a systematic improvement of Schottky contacts characterized by electrical measurements and finally, the fabrication of MeSFET (Metal Semiconductor Field Effect Transistors), DHBT (Double Heterostructure Bipolar Transistors) and rib waveguide devices.
Keywords :
Electric variables measurement; FETs; Indium compounds; Inorganic materials; Integrated optoelectronics; MESFETs; Optical device fabrication; Schottky barriers; Semiconductor materials; Surface waves;
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
