Title :
STACMOS: A Basic 3-Dimensional CMOS Process
Author :
Buchner, R. ; Haberger, K. ; Seegebrecht, P. ; Panish, P.
Author_Institution :
Fraunhofer Institut fur Festkörpertechnologie, Paul-Gerhardt-Allee 42, D-8000 Munich 60, West Germany
Abstract :
MOS Transistors have been fabricated in two independent active device layers, the second of which has been formed through laser recrystallization of a thin polysilicon layer. The effect of the fabrication process on the devices in the silicon substrate has been investigated and characterized through electrical measurements.
Keywords :
Argon; CMOS process; Circuits; Etching; MOS devices; Planarization; Silicon; Substrates; Surface topography; Temperature;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
