Title :
1μ MOS Devices with Self-Aligned Titanium Silicide CVD Tungsten as First Metallisation Level
Author :
Arena, C. ; Deleonibus, S. ; Guegan, G. ; Porte, P. ; Martin, F. ; Pelloie, J.L.
Author_Institution :
LETI/IRDI - COMMISSARIAT A L´´ENERGIE ATOMIQUE CEN/G - 85 X - 38041 GRENOBLE CEDEX - FRANCE
Keywords :
CMOS technology; Chemical vapor deposition; Inductors; MOS devices; Metallization; Silicidation; Silicides; Sputter etching; Titanium; Tungsten;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
