1μ MOS Devices with Self-Aligned Titanium Silicide CVD Tungsten as First Metallisation Level

Author

Arena, C. ; Deleonibus, S. ; Guegan, G. ; Porte, P. ; Martin, F. ; Pelloie, J.L.

Author_Institution

LETI/IRDI - COMMISSARIAT A L´´ENERGIE ATOMIQUE CEN/G - 85 X - 38041 GRENOBLE CEDEX - FRANCE

fYear

1987

fDate

14-17 Sept. 1987

Firstpage

577

Lastpage

580

Keywords

CMOS technology; Chemical vapor deposition; Inductors; MOS devices; Metallization; Silicidation; Silicides; Sputter etching; Titanium; Tungsten;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference, 1987. ESSDERC '87. 17th European

Conference_Location

Bologna, Italy

Print_ISBN

0444704779

Type

Filename

5436689

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