DocumentCode :
1940
Title :
Voltage Dependency of Propagating Single-Event Transient Pulsewidths in 90-nm CMOS Technology
Author :
Junrui Qin ; Shuming Chen ; Bin Liang ; Zhen Ge ; Yibai He ; Yankang Du ; Biwei Liu ; Jianjun Chen ; Dawei Li
Author_Institution :
Sch. of Comput. Sci., Nat. Univ. of Defense Technol., Changsha, China
Volume :
14
Issue :
1
fYear :
2014
fDate :
Mar-14
Firstpage :
139
Lastpage :
145
Abstract :
This paper reports on the supply voltage dependency of single-event transient (SET) propagation and multinode charge collection phenomena in integrated circuits. We have found that the SET pulsewidth propagating to subsequent stages in a circuit may decrease with reduced power supply voltage, which runs counter to the general conclusion that ultralow power applications are much more susceptible to disruption from a particle strike. This effect provides the circuit designers a guidance to reconsider the impact of voltage on SET pulsewidth.
Keywords :
CMOS integrated circuits; integrated circuits; power supply circuits; power supply quality; radiation hardening (electronics); CMOS technology; SET pulsewidth; circuit designers; integrated circuits; multinode charge collection; power supply voltage; propagating single-event transient pulsewidths; single-event transient propagation; size 90 nm; supply voltage dependency; ultralow power applications; Power generation; Power supplies; Voltage control; Multinode charge collection; single-event transient (SET); subthreshold; ultralow power voltage;
fLanguage :
English
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
Publisher :
ieee
ISSN :
1530-4388
Type :
jour
DOI :
10.1109/TDMR.2013.2255597
Filename :
6490364
Link To Document :
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