DocumentCode
1940096
Title
Deep States in Rapid Annealed Silicon
Author
Marco, M. Di ; Peaker, A.R. ; Hill, C. ; Hart, M. ; Glaccum, A.E.
Author_Institution
Department of Electrical Engineering and Electronics, Centre for Electronic Materials, University of Manchester, Institute of Science and Technology, P.O. Box 88, Manchester M60 1QD. England
fYear
1987
fDate
14-17 Sept. 1987
Firstpage
561
Lastpage
564
Abstract
Deep state measurements have been made on n and p-type silicon grown by Czochralski and float-zone techniques. Major changes are observed when unimplanted slices are annealed. There are differences between lamp and electron beam annealing and between float-zone and Czochralski material. The deep states created in unimplanted layers are present in low concentrations and are associated with vacancy complexes.
Keywords
Boron; Conductivity; Cooling; Electron beams; Lamps; Leakage current; Materials science and technology; Pulse measurements; Rapid thermal annealing; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location
Bologna, Italy
Print_ISBN
0444704779
Type
conf
Filename
5436694
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