Experiments and Modeling for U.H.F. Power Vertical D.MOS Transistor

After a brief description of the basic structure and fabrication process of V. D, MOSFET´s for power high frequency applications, a new non-linear dynamic model is proposed. The implantation of this model on the ASTEC III simulation program, enables its use for comparison between measured and computed characteristics under DC and small - signal conditions and to set up a new simulation procedure for designing and simulating radio-frequency power amplifiers. At last, the model is used to give some design rules for U.H.F. power V.D. MOSFET´s.