Title :
Practical considerations relating to immersion cooling of power electronics in traction systems
Author :
Barnes, Cindy M. ; Tuma, Phillip E.
Author_Institution :
Electron. Markets Mater. Div., 3M, St. Paul, MN, USA
Abstract :
Junction-to-fluid thermal resistivities, R"jf, of two dual-side-soldered insulated gate bipolar transistor (IGBT) modules immersion-cooled in a hydrofluoroether C3F7OCH3 liquid were measured experimentally. R"jf=0.040degC-cm2/W for 0.144 cm2 die at a peak heat flux of 1180 W/cm2 and 55 Amps and 0.11degC-cm2/W for 1.46 cm2 die at a peak heat flux of 550 W/cm2 and 305 Amps. A technique for automatic in situ degassing that would reduce manufacturing cost and permit field servicing of immersion systems that reach sub-ambient pressure when idle showed fluid loss rates of 0.3 g per 100 cc of air vented, roughly 1/100th that expected from an HFC-134a air conditioning system with a similar leak. Experiments to quantify packaging density and fluid requirements suggest that 100cc of fluid is required to dissipate 1kW and packaging density is limited only by the electrical bus geometry.
Keywords :
cooling; electronics packaging; insulated gate bipolar transistors; power electronics; dual-side-soldered insulated gate bipolar transistor modules; electrical bus geometry; heat flux; hydrofluoroether liquid; immersion cooling; junction-to-fluid thermal resistivities; packaging density; power electronics; traction systems; Air conditioning; Conductivity; Costs; Dielectric liquids; Immersion cooling; Insulated gate bipolar transistors; Manufacturing automation; Packaging; Power electronics; Thermal resistance; 2-phase; IGBT; cooling; degassing; fluoroketone; hydrofluoroether; immersion; inverter; passive; traction;
Conference_Titel :
Vehicle Power and Propulsion Conference, 2009. VPPC '09. IEEE
Conference_Location :
Dearborn, MI
Print_ISBN :
978-1-4244-2600-3
Electronic_ISBN :
978-1-4244-2601-0
DOI :
10.1109/VPPC.2009.5289790