• DocumentCode
    1940494
  • Title

    Total ionizing dose effects and reliability of graphene-based non-volatile memory devices

  • Author

    Zhang, Cher Xuan ; Zhang, En Xia ; Fleetwood, Daniel M. ; Alles, Michael L. ; Schrimpf, Ronald D. ; Song, Emil B. ; Galatsis, Kosmas ; Newaz, A.K.M. ; Bolotin, Kirill I.

  • Author_Institution
    Electrical Engineering and Computer Science Department, Vanderbilt University, Nashville, TN 37235, USA
  • fYear
    2013
  • fDate
    2-9 March 2013
  • Firstpage
    1
  • Lastpage
    8
  • Abstract
    We discuss total ionizing dose effects and reliability of graphene-based electronics and non-volatile memory devices. The degradation after radiation exposure of these structures derives primarily from surface oxygen adsorption. Excellent stability and memory retention are observed for ionizing radiation exposure or constant-voltage stress. Cycling of the memory state leads to a significant degradation of the performance.
  • Keywords
    Annealing; Degradation; Gases; Graphene; Logic gates; Nonvolatile memory; Radiation effects;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Aerospace Conference, 2013 IEEE
  • Conference_Location
    Big Sky, MT
  • ISSN
    1095-323X
  • Print_ISBN
    978-1-4673-1812-9
  • Type

    conf

  • DOI
    10.1109/AERO.2013.6497396
  • Filename
    6497396
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1940494