Title :
Reliability of self-aligned, ledge passivated 7.5 GHz GaAs/AlGaAs HBT power amplifiers under RF bias stress at elevated temperatures
Author :
Henderson, T.S. ; Ikalainen, P.K.
Author_Institution :
Corp. Res. & Dev., Texas Instrum. Inc., Dallas, TX, USA
fDate :
Oct. 29 1995-Nov. 1 1995
Abstract :
We report a two-temperature RF bias stress test on nominal 1.2 W 2.5 GHz GaAs/AlGaAs HBT unit cell amplifiers. MTTFs of 2020 and 1340 hours were obtained at Tj=218/spl deg/C and 245/spl deg/C, respectively, under nominal input bias. An activation energy of 0.42 eV is estimated, consistent with published results for similar devices under DC bias stress.
Keywords :
III-V semiconductors; MMIC power amplifiers; aluminium compounds; bipolar MMIC; gallium arsenide; heterojunction bipolar transistors; integrated circuit testing; microwave amplifiers; passivation; semiconductor device reliability; 0.42 eV; 1.2 W; 1340 h; 2020 h; 218 degC; 245 degC; 7.5 GHz; GaAs-AlGaAs; GaAs/AlGaAs; HBT power amplifiers; MMIC; MTTF; RF bias stress; activation energy; ledge passivated device; microwave amplifiers; nominal input bias; reliability; self-aligned device; Degradation; Gallium arsenide; Heterojunction bipolar transistors; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Stress; Temperature; Testing;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1995. Technical Digest 1995., 17th Annual IEEE
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-2966-X
DOI :
10.1109/GAAS.1995.528982
