Title :
Microwave power heterojunction bipolar transistors fabricated with thermal shunt and bathtub
Author :
Bozada, C.A. ; Barlage, D.W. ; Barrette, J.P. ; Dettmer, R.W. ; Mack, M.P. ; Sewell, J.S. ; Via, G.D. ; Yang, L.W. ; Helms, D.R. ; Komiak, J.J.
Author_Institution :
Wright Res. & Dev. Center, Wright-Patterson AFB, OH, USA
fDate :
Oct. 29 1995-Nov. 1 1995
Abstract :
Heterojunction bipolar transistor devices and circuits were fabricated using thermal shunt and bathtub thermal management techniques. Broadband cascode MMICs exhibited 10-14 dB gain at an output power of 2.5-3.0 Watts across 7-11 GHz. A 200 /spl mu/m/sup 2/ common-emitter unit cell achieved 7-8 dB linear power gain and 40% power-added efficiency at a noise power ratio (NPR) of 18 dBc at 12 GHz. Under single tone measurements at 12 GHz, the unit cell achieved 52% power-added efficiency, with 9.5 dB linear gain, 8 dB power gain and 240 mW output power at 5 V bias.
Keywords :
bipolar MMIC; heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; power bipolar transistors; semiconductor technology; 10 to 14 dB; 12 GHz; 2.5 to 3.0 W; 240 mW; 40 percent; 5 V; 52 percent; 7 to 11 GHz; 7 to 8 dB; 8 dB; 9.5 dB; bathtub; broadband cascode MMICs; common-emitter unit cell; fabrication; linear power gain; microwave power heterojunction bipolar transistors; noise power ratio; output power; power-added efficiency; single tone measurement; thermal management; thermal shunt; Fingers; Gain; Gallium arsenide; Heterojunction bipolar transistors; Laboratories; MMICs; Power amplifiers; Thermal force; Thermal management; Thermal management of electronics;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1995. Technical Digest 1995., 17th Annual IEEE
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-2966-X
DOI :
10.1109/GAAS.1995.528983
