DocumentCode
1941685
Title
20Gb/s silicon ring modulator co-integrated with a Ge monitor photodetector
Author
Pantouvaki, M. ; Verheyen, P. ; Lepage, G. ; De Coster, J. ; Yu, Haoyong ; De Heyn, P. ; Absil, P. ; Van Campenhout, J.
Author_Institution
Imec, Leuven, Belgium
fYear
2013
fDate
22-26 Sept. 2013
Firstpage
1
Lastpage
3
Abstract
We demonstrate the monolithic integration of a 20Gb/s silicon ring modulator with low darkcurrent Ge monitor photodetectors. The wavelength exhibiting optimum modulation performance can be tracked by measuring the photocurrent of monitor photodetectors implemented at the through and drop port of the ring modulator.
Keywords
elemental semiconductors; germanium; optical modulation; photoconductivity; photodetectors; silicon; wavelength division multiplexing; bit rate 20 Gbit/s; drop port; low darkcurrent Ge monitor photodetectors; monolithic integration; photocurrent; silicon ring modulator; wavelength exhibiting optimum modulation performance;
fLanguage
English
Publisher
iet
Conference_Titel
Optical Communication (ECOC 2013), 39th European Conference and Exhibition on
Conference_Location
London
Electronic_ISBN
978-1-84919-759-5
Type
conf
DOI
10.1049/cp.2013.1442
Filename
6647635
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