Title :
Current Gain Dependence on the Emitter Size of Polysilicon-Emitter Bipolar Transistor
Author :
Miura-Mattausch, M.
Author_Institution :
Siemens AG, Corporation Research and Development, Munich, FRG
Abstract :
It is shown that the current gain increases for reduced emitter sizes of self-aligned bipolar transistors with polysilicon emitter contact. This phenomenon is explained by the difference between the polysilicon contact area and the effective emitter area derived from electrical data.
Keywords :
Bipolar transistors; Circuit synthesis; Contacts; Current measurement; Doping; Research and development; Silicon compounds; Size measurement; Temperature; Tunneling;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
